|288-Pin PC RAM
|-
!<abbr title="Memory speed is commonly expressed in effective frequency, which means data transfer cycles performed each second. For example, DDR3 1600 refers to a 1600 million transfer per second. Each RAM transfer cycle consists of a 64-bit word, or eight bytes. By multiplying the frequency by eight, you convert transfers-per-second into bytes-per-second, namely the theoretical bandwidth. For DDR3 1600, its bandwidth is 12.8 gigabytes per second. Memory is designed to be backward-compatible, so generally speaking, you can safely add faster memory to a computer that was designed to run slower memory. However, your system will operate at the speed of the slowest memory module. One thing to keep in mind is that the memory does need to be the same type.">Speed </abbr>
|DDR5 6000 (PC5 48000)
|-
!<abbr title="Column Address Strobe (CAS ) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CL, the better.">CAS</abbr> Latency
|30
|-
!<abbr title="Memory timings or RAM timings measure the performance of DRAM memory using four parameters: CL, tRCD, tRP, and tRAS in units of clock cycles; they are commonly written as four numbers separated with dashes, e.g. 7-8-8-24. The fourth (tRAS) is often omitted, and a fifth, the Command rate, sometimes added (normally 2T or 1T ?also 2N, 1N). These parameters specify the latencies (time delays) that affect the speed of the random access memory. Lower numbers usually imply faster performance. What determines absolute system performance is the actual latency time, usually measured in nanoseconds. For example CL=7 for memory bus with clock 1ns (frequency 1000MHz), gives an absolute latency of 7ns. Other memory with CL=8 and memory bus 0.75ns (750ps, frequency 1333MHz), gives an absolute latency of 6ns.">Timing </abbr>
|30-40-40-96
|-
!<abbr title="DDR3 memories operate at lower voltages compared to DDR2 memories, which in turn operate at lower voltages compared to DDR memories. This means that DDR3 memories consume less power than DDR2 memories, which in turn consume less power than DDR memories. Typically, DDR memories are fed with 2.5 V, DDR2 memories are fed with 1.8 V, and DDR3 memories are fed with 1.5 V. DDR3L, the low Voltage DDR3, supports 1.35V and 1.5V operation. When configured at 1.35V, DDR3L memory can reduce server power consumption by 15% or more over an equivalent 1.5V memory, especially on servers. Some memory modules may require higher voltages than those listed. This happens especially with memories supporting the operation of clock rates higher than the official ones (i.e., memories targeted to overclocking).">Voltage</abbr>
|1.40V
|-
|Dual Channel Kit
|-
!<abbr title="The AMD Extended Profiles for Overclocking (AMD EXPO Technology) was developed to allow for user-friendly memory overclocking support of all types of memory, giving users an easy path to accelerated power to achieve accelerated memory in their system. Intel Extreme Memory Profile (Intel XMP) lets you overclock compatible DDR4 /DDR5 memory modules to enhance the gaming features built into PCs with Intel Core processors.">BIOS/Performance Profile </abbr>
|AMD EXPO
|-
